收藏本站
Si4914BDY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
59
36
70
45
52
32
62.5
40
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2.
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
Ch-1
Ch-2
Ch-1
Ch-1
30
30
35
- 6.2
V
mV/°C
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
Ch-1
Ch-2
1.2
1.2
2.7
2.7
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 85 °C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 8 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
20
20
0.0165
100
100
1
100
15
10000
0.021
nA
μA
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 8 A
V GS = 4.5 V, I D = 6 A
Ch-2
Ch-1
0.0155
0.0215
0.020
0.027
Ω
V GS = 4.5 V, I D = 6 A
Ch-2
0.020
0.025
Forward Transconductance b
g fs
V DS = 15 V, I D = 8 A
V DS = 15 V, I D = 8 A
Ch-1
Ch-2
29
33
S
Diode Forward Voltage b
V SD
I S = 1.7 A, V GS = 0 V
I S = 1 A, V GS = 0 V
Ch-1
Ch-2
0.77
0.46
1.1
0.5
V
Dynamic a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q g
Q gs
Q gd
R g
Channel-1
V DS = 15 V, V GS = 4.5 V, I D = 8 A
Channel-2
V DS = 15 V, V GS = 4.5 V, I D = 8 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
6.7
7.0
2.8
2.8
2.0
2.0
2.9
2.0
10.5
11.0
6.0
4.0
nC
Ω
www.vishay.com
2
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4914DY-T1-E3 MOSFET DUAL N-CH 30V 8-SOIC
SI4916DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4920DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4932DY-T1-GE3 MOSFET N-CH DUAL 30V 8-SOIC
SI4933DY-T1-GE3 MOSFET P-CH DUAL 12V 8-SOIC
SI4936CDY-T1-E3 MOSFET 2N-CH 30V 5.8A SO8
SI4940DY-T1-GE3 MOSFET N-CH DUAL 40V 8-SOIC
SI4943BDY-T1-GE3 MOSFET P-CH D-S 20V 8-SOIC
相关代理商/技术参数
SI4914BDY-T1-GE3 功能描述:MOSFET 30V 8.4A/8A DUAL NCH MOSFET w/Shottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4914DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4914DY-T1-E3 功能描述:MOSFET DUAL N-CH 30V (D-S) W/SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4916DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4916DY-T1-E3 功能描述:MOSFET 30 Volt 6.6/8.9 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4916DY-T1-GE3 功能描述:MOSFET 30V 10/10.5A 18mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4920DY 功能描述:MOSFET SO8 DUAL NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4920DY 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NN SO-8